Bibliografische Daten
ISBN/EAN: 9781461480532
Sprache: Englisch
Umfang: x, 263 S., 89 s/w Illustr., 81 farbige Illustr., 2
Format (T/L/B): 2 x 24.3 x 16.1 cm
Einband: gebundenes Buch
Beschreibung
InhaltsangabeI.Introduction Chapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung) II.Fundamentals Chapter 2. ALD Precursors and Reaction mechanism; Roy Gordon (Harvard) Chapter 3. ALD simulations; Simon Elliott (Tyndall) III.ALD for memory devices Chapter 4. ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang, Seong Keun Kim, and Sang Woon Lee (SNU) III2. ALD for emerging memories Chapter 5. PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM) Chapter 6.FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon) IV.ALD for logic devices Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang Chapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and Youngnam University) V.ALD machines Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu
Produktsicherheitsverordnung
Hersteller:
Springer Verlag GmbH
juergen.hartmann@springer.com
Tiergartenstr. 17
DE 69121 Heidelberg
Autorenportrait
InhaltsangabeI.Introduction Chapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung) II.Fundamentals Chapter 2. ALD Precursors and Reaction mechanism; Roy Gordon (Harvard) Chapter 3. ALD simulations; Simon Elliott (Tyndall) III.ALD for memory devices Chapter 4. ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang, Seong Keun Kim, and Sang Woon Lee (SNU) III2. ALD for emerging memories Chapter 5. PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM) Chapter 6.FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon) IV.ALD for logic devices Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang Chapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and Youngnam University) V.ALD machines Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu
