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GaN and SiC Power Devices

From Fundamentals to Applied Design and Market Analysis, Synthesis Lectures on Engineering, Science, and Technology

Erschienen am 02.02.2025, 1. Auflage 2025
64,19 €
(inkl. MwSt.)

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Bibliografische Daten
ISBN/EAN: 9783031506567
Sprache: Englisch
Umfang: xv, 264 S., 6 s/w Illustr., 41 farbige Illustr., 2
Einband: kartoniertes Buch

Beschreibung

This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.

Produktsicherheitsverordnung

Hersteller:
Springer Verlag GmbH
juergen.hartmann@springer.com
Tiergartenstr. 17
DE 69121 Heidelberg


Autorenportrait

Maurizio Di Paolo Emilio is Editor in Chief of Power Electronics News and EEWeb, and an EE Times correspondent. He holds a Ph.D in physics and is a telecommunications engineer. He has worked on projects concerning gravitational waves research, designing a thermal compensation system (TCS) and data acquisition and control systems, and on others about x-ray microbeams in collaboration with Columbia University and motor control for space with INFN. TCS was applied to the Virgo and LIGO experiments, which detected gravitational waves for the first time and earned the Nobel Prize in 2017.